The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Jul. 09, 2015
Choong-jae Lee, Hwaseong-si, KR;
Hong-kook Min, Yongin-si, KR;
Bo-young Seo, Suwon-si, KR;
Aliaksei Ivaniukovich, Hwaseong-si, KR;
Yong-kyu Lee, Gwacheon-si, KR;
Choong-jae Lee, Hwaseong-si, KR;
Hong-kook Min, Yongin-si, KR;
Bo-young Seo, Suwon-si, KR;
Aliaksei Ivaniukovich, Hwaseong-si, KR;
Yong-kyu Lee, Gwacheon-si, KR;
Abstract
A semiconductor device comprises a magneto-resistive device capable of performing multiple functions with low power. The semiconductor device comprises a cell transistor in which a first impurity region and a second impurity region are respectively arranged on both sides of a channel region in a channel direction, a source line connected to the first impurity region of the cell transistor, and the magneto-resistive device connected to the second impurity region of the cell transistor. The first impurity region and the second impurity region are asymmetrical about a center of the cell transistor in the channel direction with respect to at least one of a shape and an impurity concentration distribution.