The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Mar. 04, 2014
Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventor:

Hiroaki Furukawa, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1248 (2013.01); H01L 27/1222 (2013.01); H01L 27/1244 (2013.01); H01L 27/1259 (2013.01); H01L 23/522 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device (T,B) includes: a substrate (); a first metal layer () supported on the substrate (), the first metal layer () including a plurality of first wires (); an insulating layer () provided on the first metal layer (); a second metal layer () provided on the insulating layer (), the second metal layer () including a plurality of second wires (); an insulative protection layer () covering part of each of the plurality of second wires (), and an electrically-conductive layer () provided on the insulative protection layer (). In a cross section including a boundary between a first region (R) in which the insulative protection layer () is provided and a second region (R) in which the insulative protection layer () is not provided, a surface of the insulating layer () which is on the insulative protection layer () side has a step between two of the second wires which adjoin each other.


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