The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Apr. 18, 2011
Applicant:
Marcelo A. Martinez, Davis, CA (US);
Inventor:
Marcelo A. Martinez, Davis, CA (US);
Assignee:
Silego Technology, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/417 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 23/522 (2013.01); H01L 23/5221 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 25/072 (2013.01); H01L 29/41758 (2013.01); H01L 23/5286 (2013.01);
Abstract
A lateral power MOSFET structure is disclosed. In some embodiments, a semiconductor device comprises substantially concentric source, channel, and drain regions; a metal layer at least in part comprising a drain plane disposed over the source, channel, and drain regions; and a metal layer at least in part comprising a source plane disposed over the source, channel, and drain regions.