The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Jul. 24, 2015
Applicant:

Renesas Electronics Corporation, Kanagawa, JP;

Inventors:

Takashi Ogura, Ibaraki, JP;

Tatsuya Usami, Ibaraki, JP;

Satoshi Kodama, Kanagawa, JP;

Shuuichirou Ueno, Ibaraki, JP;

Satoshi Itou, Ibaraki, JP;

Takamasa Itou, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 23/532 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/76829 (2013.01); H01L 21/76831 (2013.01); H01L 21/76841 (2013.01); H01L 21/76843 (2013.01); H01L 23/5329 (2013.01); H01L 27/10885 (2013.01); H01L 23/53223 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiON(where x>0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W.


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