The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Feb. 05, 2016
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Ki Hong Yang, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 27/115 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/02274 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 23/481 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a first insulating layer, a second insulating layer formed on the first insulating layer, a plurality of interconnection lines formed in the second insulating layer, and a first air gap disposed between the first insulating layer and the second insulating layer to surround a lower part of the interconnection lines.