The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Sep. 27, 2014
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Jung Pill Kim, San Diego, CA (US);
Dexter Tamio Chun, San Diego, CA (US);
Deepti Vijayalakshmi Sriramagiri, San Diego, CA (US);
Jungwon Suh, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/07 (2006.01); G11C 11/406 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 29/78 (2013.01); G06F 11/073 (2013.01); G06F 11/0751 (2013.01); G06F 11/0793 (2013.01); G11C 11/406 (2013.01); G11C 11/40603 (2013.01); G11C 11/40615 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); G11C 29/783 (2013.01); G11C 29/787 (2013.01); G11C 29/027 (2013.01);
Abstract
In a repair of a random access memory (RAM), an error information is received, a fail address of the RAM identified, and a one-time programming applied to a portion of the redundancy circuit while a content of the RAM is valid. Optionally, the RAM is a dynamic access RAM (DRAM), a refresh burst is applied to the DRAM, followed by a non-refresh interval, and the one-time programming is performed during the non-refresh interval.