The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Aug. 10, 2015
Applicants:

SK Hynix Inc., Gyeonggi-do, KR;

Industry-university Cooperation Foundation Hanyang University, Seoul, KR;

Inventors:

Sung-Wook Choi, Gyeonggi-do, KR;

Jung-Hoon Ham, Seoul, KR;

Young-Il Kim, Seoul, KR;

Sang-Sun Lee, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); G11C 16/32 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/32 (2013.01);
Abstract

A semiconductor memory device includes a memory cell suitable for having a predetermined cell state based on a data stored therein, a control signal generation unit suitable for generating a control signal for changing the cell state of the memory cell during a reading operation, an information storage unit suitable for storing a variation status information of the control signal to which a moment when the cell state of the memory cell changes is reflected, and an output unit suitable for outputting the variation status information of the control signal stored in the information storage unit as a signal corresponding to the data stored in the memory cell.


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