The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Feb. 05, 2015
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Dario Sutera, Catania, IT;

Davide Giuseppe Patti, Mascalucia, IT;

Valeria Cinnera Martino, Valverde, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 15/20 (2006.01); G01R 15/18 (2006.01); G01R 19/00 (2006.01); G01R 33/07 (2006.01);
U.S. Cl.
CPC ...
G01R 15/202 (2013.01); G01R 15/18 (2013.01); G01R 15/207 (2013.01); G01R 19/0092 (2013.01); G01R 33/07 (2013.01);
Abstract

The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon. The device is integrated in a chip formed by a substrate and by an insulating layer, the sensitive region and the concentrator being formed in the insulating layer.


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