The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Sep. 04, 2007
Applicants:

Sener Albayrak, Saarbruecken, DE;

Carsten Becker-willinger, Saarbruecken, DE;

Michael Veith, Ingbert, DE;

Oral Cenk Aktas, Saarbruecken, DE;

Inventors:

Sener Albayrak, Saarbruecken, DE;

Carsten Becker-Willinger, Saarbruecken, DE;

Michael Veith, Ingbert, DE;

Oral Cenk Aktas, Saarbruecken, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G 77/24 (2006.01); C08L 75/00 (2006.01); C08K 3/22 (2006.01); H01B 3/10 (2006.01); C09D 7/12 (2006.01); H01B 3/00 (2006.01); C08K 3/30 (2006.01); C08K 9/04 (2006.01); C08K 9/08 (2006.01);
U.S. Cl.
CPC ...
C09D 7/1225 (2013.01); C09D 7/1266 (2013.01); C09D 7/1275 (2013.01); H01B 3/006 (2013.01); C08K 3/22 (2013.01); C08K 3/30 (2013.01); C08K 9/04 (2013.01); C08K 9/08 (2013.01);
Abstract

The aim of the invention is to create a composition for coating electric conductors which is significantly more resistant to partial discharges than prior art compositions while the produced insulating layer is highly extensible. Said aim is achieved by a composition comprising 1 to 50 percent by weight of microparticles that have a specifically adjusted electronic defect structure in the crystal lattice, resulting in greater polarizability of the valence electrons, and an organic and/or organic-inorganic matrix. The microparticles that have a specifically adjusted electronic defect structure are composed of oxides, sulfides, selenides, tellurides of the elements which are part of the series encompassing silicon, zinc, aluminum, tin, boron, germanium, gallium, lead, the transition metals, lanthanides, and actinides, particularly from the series encompassing silicon, titanium, zinc, yttrium, cerium, vanadium, hafnium, zirconium, nickel, and/or tantalum, in such a way that the basic lattice is provided with vacant lattice positions by doping 4 the basic lattice with adequate low-valent or higher-valent elements, said vacant lattice positions increasing the electronic polarizability of the microparticles by means of defect chemistry (the defect structure).


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