The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2017

Filed:

Jul. 27, 2012
Applicants:

Paul Franklin Nealey, Madison, WI (US);

Frank S. Bates, St. Louis Park, MN (US);

Sangwon Kim, Minneapolis, MN (US);

Inventors:

Paul Franklin Nealey, Madison, WI (US);

Frank S. Bates, St. Louis Park, MN (US);

Sangwon Kim, Minneapolis, MN (US);

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08F 8/08 (2006.01); B32B 3/10 (2006.01); C08F 293/00 (2006.01); C08F 297/02 (2006.01); B82Y 40/00 (2011.01); C08F 236/08 (2006.01); C08F 297/04 (2006.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); B82Y 10/00 (2011.01); C08C 19/06 (2006.01); C08F 212/08 (2006.01);
U.S. Cl.
CPC ...
C08F 297/02 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); C08F 8/08 (2013.01); C08F 236/08 (2013.01); C08F 297/046 (2013.01); G03F 7/0002 (2013.01); G03F 7/165 (2013.01); C08C 19/06 (2013.01); C08F 212/08 (2013.01); C08F 2438/02 (2013.01); Y10T 428/24802 (2015.01);
Abstract

Provided herein are methods of formulating and engineering block copolymer (BCP) systems for directed self-assembly (DSA) processes. In some embodiments, the methods involve engineering a BCP material based on the interaction parameter (χ) of the material and the surface and/or interaction energies of its constituent blocks. Also provided are novel block BCP materials that can be used in DSA techniques. In some embodiments, the BCP systems described herein have micro-phase separating blocks, with at least one block including multiple types of repeat units. Also provided are structures formed by DSA, including structures having a sub-20 nm dimension. Applications included nanolithography for semiconductor devices, fabrication of cell-based assays, nanoprinting, photovoltaic cells, and surface-conduction electron-emitter displays.


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