The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Aug. 25, 2014
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Yasuhiro Mitamura, Kanagawa, JP;

Masaya Nakayama, Kanagawa, JP;

Yuki Matsunami, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H05K 1/09 (2006.01); B32B 15/08 (2006.01); H05K 3/28 (2006.01); H01B 3/44 (2006.01); B32B 5/02 (2006.01); B32B 7/12 (2006.01); B32B 27/20 (2006.01); B32B 27/28 (2006.01); B32B 27/30 (2006.01); B32B 27/32 (2006.01); B32B 27/36 (2006.01); B32B 27/38 (2006.01); B32B 27/42 (2006.01); B32B 3/08 (2006.01); C08K 5/378 (2006.01); C08K 5/47 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0256 (2013.01); B32B 3/08 (2013.01); B32B 5/024 (2013.01); B32B 7/12 (2013.01); B32B 15/08 (2013.01); B32B 27/20 (2013.01); B32B 27/281 (2013.01); B32B 27/283 (2013.01); B32B 27/30 (2013.01); B32B 27/308 (2013.01); B32B 27/32 (2013.01); B32B 27/322 (2013.01); B32B 27/36 (2013.01); B32B 27/38 (2013.01); B32B 27/42 (2013.01); H01B 3/447 (2013.01); H05K 1/092 (2013.01); H05K 3/285 (2013.01); B32B 2255/205 (2013.01); B32B 2260/021 (2013.01); B32B 2260/046 (2013.01); B32B 2262/0269 (2013.01); B32B 2262/101 (2013.01); B32B 2307/202 (2013.01); B32B 2307/412 (2013.01); B32B 2457/00 (2013.01); C08K 5/378 (2013.01); C08K 5/47 (2013.01); H05K 2201/0108 (2013.01); H05K 2201/0145 (2013.01); H05K 2201/0154 (2013.01); H05K 2201/0206 (2013.01); H05K 2201/032 (2013.01); H05K 2201/0769 (2013.01); Y10T 428/2804 (2015.01);
Abstract

A composition for forming a silver ion diffusion-suppressing layer includes an insulating resin and a compound including: a structure selected from the group consisting of a triazole structure, a thiadiazole structure and a benzimidazole structure; a mercapto group; and at least one hydrocarbon group optionally containing a heteroatom, with the total number of carbon atoms in the hydrocarbon group or groups being 5 or more. The composition for forming a silver ion diffusion-suppressing layer allows formation of a silver ion diffusion-suppressing layer capable of suppressing silver ion migration between metal interconnects containing silver or a silver alloy to improve the reliability on the insulation between the metal interconnects.


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