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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9577636 B1

PDFFull Text
Date of Patent:
Feb. 21, 2017

Filed:

Feb. 23, 2016

Substate bias voltage generation circuits and methods to control leakage in semiconductor memory device

Applicant:

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventor:

Yun Seok Hong, Icheon-si Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:

William Park & Associates Ltd.

Primary Examiner:

Richard Elms

Assistant Examiner:

Ajay Ojha

Int. Cl.
CPC ...
H03K 19/00 (2006.01); H01L 21/761 (2006.01); G11C 7/22 (2006.01); G11C 5/14 (2006.01); G11C 29/12 (2006.01); G11C 7/20 (2006.01);
U.S. Cl.
CPC ...
H03K 19/0016 (2013.01); G11C 5/146 (2013.01); G11C 5/147 (2013.01); G11C 7/20 (2013.01); G11C 7/222 (2013.01); G11C 29/12005 (2013.01); H01L 21/761 (2013.01);
Abstract

A semiconductor device may be provided. The semiconductor device may include a first switching control signal generation circuit configured to generate a first switching control signal which is enabled in synchronization with a time when a first delay period has passed from a time when a power-down mode is entered. The semiconductor device may include a second switching control signal generation circuit configured to generate a second switching control signal which is enabled during a period from a time when a read operation mode or a write operation mode is entered to a time when a second delay period has passed.

Find Patent Forward Citations

Hong, Yun. (2017). Substate bias voltage generation circuits and methods to control leakage in semiconductor memory device (U.S. Patent No. 9577636). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9577636

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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