The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Dec. 21, 2015
Applicant:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

Inventor:

Tatsuma Saito, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/88 (2006.01); H01L 29/861 (2006.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A semiconductor light emitting device including a plurality of light emitting elements can be miniaturized while enabling to emit light with high luminance. The semiconductor light emitting device can include a mounting substrate, and a plurality of semiconductor light emitting elements mounted on the mounting substrate side by side, each of the semiconductor light emitting elements having a semiconductor structure layer that can include a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type, which are layered in that order. Each of the semiconductor light emitting elements can have a resonator constituted by end surfaces of the semiconductor structure layer opposite to each other, and also has a recessed portion recessed from the surface of the second semiconductor layer toward the active layer.


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