The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Sep. 01, 2014
Asahi Kasei E-materials Corporation, Tokyo, JP;
Hiroyuki Tsujimoto, Tokyo, JP;
Atsushi Suzuki, Tokyo, JP;
Junji Kato, Tokyo, JP;
Shozo Takada, Tokyo, JP;
ASAHI KASEI E-MATERIALS CORPORATION, Tokyo, JP;
Abstract
A semiconductor light emitting device, which can endure a dicing step for singulation, is superior in resistance to a high/low thermal cycle, and exhibits a high light extraction efficiency, and an optical film, which can be used favorably for producing the semiconductor light emitting device, are to be provided. The invention provides a semiconductor light emitting device comprising a semiconductor layer, an A layer, and a B layer, in which the semiconductor light emitting device is configured such that at least a part of emitted light from the semiconductor layer is emitted outward from the B layer through the A layer, the thickness of the A layer is from 1 nm to 200 nm, the B layer has a first major surface and a second major surface, while the first major surface faces the A layer and the second major surface has a concave-convex microstructure, the B layer contains an inorganic substance at 60 mass-% or more on the basis of the total mass of the B layer, and the content of an inorganic substance present in the A layer is lower than the content of the inorganic substance present in the B layer.