The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Mar. 14, 2016
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Sum Geun Lee, Ansan-si, KR;

Sang Ki Jin, Ansan-si, KR;

Jin Cheol Shin, Ansan-si, KR;

Jong Kyu Kim, Ansan-si, KR;

So Ra Lee, Ansan-si, KR;

Chung Hoon Lee, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01L 27/15 (2006.01); H01L 33/22 (2010.01); H01L 33/50 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 27/153 (2013.01); H01L 33/0008 (2013.01); H01L 33/22 (2013.01); H01L 33/505 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/0079 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0058 (2013.01);
Abstract

A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.


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