The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Feb. 05, 2014
The University of Tokyo, Tokyo, JP;
Masakazu Sugiyama, Tokyo, JP;
Manish Mathew, Tokyo, JP;
Yoshiaki Nakano, Tokyo, JP;
Hassanet Sodabanlu, Tokyo, JP;
THE UNIVERSITY OF TOKYO, Tokyo, JP;
Abstract
An n-type GaN layer made of n-type gallium nitride (GaN) is formed on a sapphire substrate. A plurality of island-phased layered structures are formed in random sizes between the n-type GaN layer and a p-type GaN layer that is made of p-type GaN. Each of the layered structures is configured by stacking multiple AlN layers made of aluminum nitride (AlN) and multiple InGaN layers made of indium gallium nitride (InGaN) on an AlN base layer. The respective layered structures emit lights of different wavelengths. This accordingly allows for emission of light in a wider wavelength range.