The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Mar. 07, 2014
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0025 (2013.01); H01L 33/04 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01);
Abstract
Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.