The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Apr. 22, 2014
Applicant:

Yeda Research and Development Co. Ltd., Rehovot, IL;

Inventors:

Dan Oron, Rehovot, IL;

Zvi Deutsch, Rehovot, IL;

Lior Neeman, Rehovot, IL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2012.01); H01L 31/0352 (2006.01); C09K 11/88 (2006.01); H01L 31/0232 (2014.01); H01L 31/055 (2014.01); C09K 11/54 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); C09K 11/54 (2013.01); C09K 11/88 (2013.01); H01L 31/02322 (2013.01); H01L 31/055 (2013.01); Y02E 10/52 (2013.01);
Abstract

The present invention is based on a unique design of a novel structure, which incorporates two quantum dots of a different bandgap separated by a tunneling barrier. Upconversion is expected to occur by the sequential absorption of two photons. In broad terms, the first photon excites an electron-hole pair via intraband absorption in the lower bandgap dot, leaving a confined hole and a relatively delocalized electron. The second absorbed photon can lead, either directly or indirectly, to further excitation of the hole, enabling it to then cross the barrier layer. This, in turn, is followed by radiative recombination with the delocalized electron.


Find Patent Forward Citations

Loading…