The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Dec. 09, 2015
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Roberto Simola, Trets, FR;

Pascal Fornara, Pourrieres, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/866 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/866 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/402 (2013.01); H01L 29/407 (2013.01); H01L 29/7391 (2013.01); H01L 29/0692 (2013.01);
Abstract

The present disclosure relates to a Zener diode including a cathode region having a first conductivity type, formed on a surface of a semiconductor substrate having a second conductivity type. The Zener diode includes an anode region having the second conductivity type, formed beneath the cathode region. One or more trench isolations isolate the cathode and anode regions from a remainder of the substrate. A first conducting region is configured to, when subjected to an adequate voltage, generate a first electric field perpendicular to an interface between the cathode and anode regions. A second conducting region is configured to, when subjected to an adequate voltage, generate a second electric field parallel to the interface between the cathode and anode regions.


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