The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Nov. 11, 2015
Applicant:
AU Optronics Corporation, Hsinchu, TW;
Inventor:
Jia-Hong Ye, New Taipei, TW;
Assignee:
Au Optronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/02565 (2013.01); H01L 21/02675 (2013.01);
Abstract
A method of fabricating a thin film transistor including following steps is provided. Sequentially form a semiconductor layer, a metal layer and an auxiliary layer on a substrate. Perform a crystallization process to transform the semiconductor layer into an active layer after the metal layer and the auxiliary layer are disposed on the semiconductor layer. After the active layer is formed, pattern the metal layer to form a source and a drain. Form a gate insulator and a gate. The gate insulator is disposed between the gate and the source and drain.