The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Aug. 11, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Koh Yoshikawa, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Abstract
A semiconductor device includes a drift region of a first conductivity type, a channel forming region of a second conductivity type that is selectively provided in a first main surface of the drift region, a first main electrode region of the first conductivity type that is selectively provided in an upper part of the channel forming region, a second main electrode region of the second conductivity type that is provided in a second main surface of the drift region, and a high-concentration region of the first conductivity type that is provided in a portion of the drift region below the channel forming region so as to be separated from the channel forming region. The high-concentration region has a higher impurity concentration than the drift region and the total amount of first-conductivity-type impurities in the high-concentration region is equal to or less than 2.0×10cm.