The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Dec. 07, 2011
Yasuhiko Onishi, Matsumoto, JP;
Akio Sugi, Matsumoto, JP;
Yasuhiko Onishi, Matsumoto, JP;
Akio Sugi, Matsumoto, JP;
FUI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor apparatus that has a first parallel pn-layer formed between an active region and an n-drain region. A peripheral region is provided with a second parallel pn-layer, which has a repetition pitch narrower than the repetition pitch of the first parallel pn-layer. An n-surface region is formed between the second parallel pn-layer and a first main surface. On the first main surface side of the n-surface region, a plurality of p-guard ring regions are formed to be separated from each other. A field plate electrode is connected electrically to the outermost p-guard ring region among the p-guard ring regions. A channel stopper electrode is connected electrically to an outermost peripheral p-region of the peripheral region.