The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Sep. 24, 2014
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Jin Woo Han, Cheongju-si, KR;
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
The present disclosure relates to a semiconductor device. Such a semiconductor device includes a trench metal-oxide-semiconductor (MOS) transistor having two or more electrodes in a trench formed on a substrate of the semiconductor, where a part of a shield electrode positioned at a bottom of the trench is formed to have a large thickness, and a groove is formed in a gate electrode that is stacked on the shield electrode, such that a part of the shield electrode protrudes to a surface of the semiconductor device so as to be connected with a source power. In such a manner, by minimizing a region in which the shield electrode and the gate electrode overlap, a region that decreases problematic effects, such as leakage current of gate/source or gate/drain of a trench MOS transistor, and a region where high difference of a gate electrode is generated, are removed.