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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9577052 B1

PDFFull Text
Date of Patent:
Feb. 21, 2017

Filed:

Mar. 02, 2016

Method for fabricating semiconductor device having dual work function gate structure

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Tae-Kyung Oh, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:

IP & T Group LLP

Primary Examiner:

Nikolay Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 45/00 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 21/764 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/28525 (2013.01); H01L 21/28568 (2013.01); H01L 21/30604 (2013.01); H01L 21/764 (2013.01); H01L 21/76224 (2013.01); H01L 27/228 (2013.01); H01L 27/2454 (2013.01); H01L 29/4236 (2013.01); H01L 29/4916 (2013.01); H01L 29/4941 (2013.01); H01L 29/4966 (2013.01); H01L 29/7827 (2013.01); H01L 45/06 (2013.01); H01L 27/10885 (2013.01);
Abstract

A semiconductor device includes a body including a first junction region; a pillar positioned over the body, and including a vertical channel region and a second junction region over the vertical channel region; a gate trench exposing side surfaces of the pillar; a gate dielectric layer covering the gate trench; and a gate electrode embedded in the gate trench, with the gate dielectric layer interposed therebetween. The gate electrode includes a first work function liner overlapping with the vertical channel region, and including an aluminum-containing metal nitride; a second work function liner overlapping with the second junction region, and including a silicon-containing non-metal material; and an air gap positioned between the second work function liner and the second junction region.

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