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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9577050 B1

PDFFull Text
Date of Patent:
Feb. 21, 2017

Filed:

Dec. 09, 2011

Semiconductor laminate, semiconductor device, and production method thereof

Applicants:

Yuka Tomizawa, Hino, JP;

Yoshinori Ikeda, Hino, JP;

Tetsuya Imamura, Hino, JP;

Inventors:

Yuka Tomizawa, Hino, JP;

Yoshinori Ikeda, Hino, JP;

Tetsuya Imamura, Hino, JP;

Assignee:

TEIJIN LIMITED, Osaka, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Cuong B Nguyen

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 29/36 (2006.01); C01B 33/02 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 31/068 (2012.01); H01L 29/04 (2006.01); H01L 31/18 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); C01B 33/02 (2013.01); H01L 21/0245 (2013.01); H01L 21/02532 (2013.01); H01L 21/02573 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02601 (2013.01); H01L 21/02628 (2013.01); H01L 21/02686 (2013.01); H01L 21/2254 (2013.01); H01L 29/045 (2013.01); H01L 29/66757 (2013.01); H01L 29/66765 (2013.01); H01L 31/068 (2013.01); H01L 31/0682 (2013.01); H01L 31/186 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device () of the present invention comprises the steps (a)-(c) described below and is characterized in that the crystal orientation of a first dopant implanted layer () is the same as the crystal orientation of a semiconductor layer or a base () that is formed of a semiconductor element. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base.

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