The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Aug. 13, 2015
Jongryeol Yoo, Osan-si, KR;
Hyun Jung Lee, Suwon-si, KR;
Sunjung Kim, Suwon-si, KR;
Seung Hun Lee, Hwaseong-si, KR;
Eunhye Choi, Daejeon, KR;
Jongryeol Yoo, Osan-si, KR;
Hyun Jung Lee, Suwon-si, KR;
Sunjung Kim, Suwon-si, KR;
Seung Hun Lee, Hwaseong-si, KR;
Eunhye Choi, Daejeon, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a buffer layer on a semiconductor substrate including first and second regions, a first channel layer on the buffer layer of the first region, a second channel layer on the buffer layer of the second region, and a spacer layer between the second channel layer and the buffer layer. The buffer layer, the first and second channel layers, and the spacer layer are formed of semiconductor materials including germanium. A germanium concentration difference between the first and second channel layers is greater than a germanium concentration difference between the buffer layer and the second channel layer. The spacer layer has a germanium concentration gradient.