The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

May. 13, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dongwon Lim, Suwon-si, KR;

Kweonjae Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 28/65 (2013.01); H01L 28/90 (2013.01);
Abstract

A capacitor in a semiconductor device may include a lower electrode, a dielectric layer including a metal oxide and disposed on the lower electrode, a first material layer including aluminum oxide (AlO) and disposed on the dielectric layer, a second material layer including titanium oxynitride (TiON) and disposed on the first material layer, and an upper electrode disposed on the second material layer, wherein the first material layer is between the dielectric layer and the second material layer, and the dielectric layer is between the lower electrode and the first material layer.


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