The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Dec. 02, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Dukseo Park, Hwaseong-Si, KR;

Sangil Jung, Seoul, KR;

Changrok Moon, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14689 (2013.01);
Abstract

An image sensor can include a photoelectric conversion part of an active region of a substrate and a trench in the substrate. A transfer transistor gate electrode can extend from outside the trench into the trench and terminate in the trench to provide an exposed portion of the trench in the photoelectric conversion part.


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