The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Mar. 30, 2012
Applicants:

Sang-hun Jeon, Seoul, KR;

I-hun Song, Gyeonggi-do, KR;

Seung-eon Ahn, Gyeonggi-do, KR;

Chang-jung Kim, Gyeonggi-do, KR;

Young Kim, Gyeonggi-do, KR;

Inventors:

Sang-hun Jeon, Seoul, KR;

I-hun Song, Gyeonggi-do, KR;

Seung-eon Ahn, Gyeonggi-do, KR;

Chang-jung Kim, Gyeonggi-do, KR;

Young Kim, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/146 (2006.01); G06F 3/042 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); G06F 3/042 (2013.01); G06F 2203/04103 (2013.01);
Abstract

Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.


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