The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jul. 21, 2016
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Kuo-Lung Fang, New Taipei, TW;
Yi-Chun Kao, New Taipei, TW;
Hsin-Hua Lin, New Taipei, TW;
Chih-Lung Lee, New Taipei, TW;
Po-Li Shih, New Taipei, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A thin film transistor includes a substrate, a gate electrode formed on the substrate, an electrically insulating layer formed on the substrate and covering the gate electrode, a channel layer made of semiconductor material and formed on the electrically insulating layer, an etch stop pattern formed on the channel layer and defining a first through hole and a second through hole; and a source electrode and a drain electrode formed on the etch stop pattern. The source electrode extends into the first through hole to electrically couple to the channel layer. The drain electrode extends into the second through hole to electrically couple to the channel layer. Both the channel layer and the etch stop pattern are formed by using a single mask and a single photoresist layer.