The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Sep. 02, 2014
Applicant:
SK Hynix Inc., Incheon-si Gyeonggi-do, KR;
Inventors:
Assignee:
SK HYNIX INC., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 27/1158 (2013.01); H01L 27/11519 (2013.01); H01L 27/11553 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 27/12 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01);
Abstract
A semiconductor device includes a first source layer; at least one of a second source layer, the second source layer formed substantially in the first source layer; a plurality of conductive layers stacked substantially over the first source layer; channel layers that pass through the plurality of conductive layers and couple to the second source layer; and at least one of a third source layer, the third source layer formed substantially in the second source layer, wherein the third source layer passes through the second source layer and is coupled to the first source layer.