The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jun. 23, 2015
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Kanako Komatsu, Yokohama Kanagawa, JP;
Keita Takahashi, Yokohama Kanagawa, JP;
Masahiro Inohara, Fujisawa Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first and second transistor. Each of the first and the second transistors includes a well of a first conductivity type, a band-shaped region provided on the well, a drain region of a second conductivity type provided on the well, and a gate electrode. The band-shaped region, the drain region and the gate electrode extend in a first direction. The band-shaped region includes a back gate region of the first conductivity type and a source region of the second conductivity type. The back gate region and the source region are arranged alternately along the first direction in the band-shaped region. A ratio of a length of the source region to a length of the back gate region along the first direction of the first transistor is greater than the ratio of the second transistor.