The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Feb. 24, 2016
Kabushiki Kaisha Toshiba, Tokyo, JP;
Taishi Ishikura, Kuwana Mie, JP;
Atsunobu Isobayashi, Yokkaichi Mie, JP;
Akihiro Kajita, Yokkaichi Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a first wiring comprising a first conductive material on a semiconductor layer, a second wiring comprising the first conductive material on the semiconductor layer, a third wiring comprising a second conductive material different from the first conductive material, and an insulation film on the semiconductor layer between the first wiring and the second wiring and between the second wiring and the third wiring. The second wiring is provided on at least two sides of the third wiring, and a mean free path of free electrons in the first conductive material is shorter than a mean free path of free electrons in the second conductive material, or the first conductive material shows quantized conduction and the second conductive material does not show quantized conduction. The first wiring, the second wiring, the third wiring, and the insulation film are in one wiring layer provided on the semiconductor layer.