The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

May. 28, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Masayuki Akou, Yokohama, JP;

Norihisa Arai, Saitama, JP;

Keisuke Murayama, Chigasaki, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 21/743 (2013.01); H01L 2224/11 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes: a semiconductor substrate, the semiconductor substrate having first and second surfaces; conductive regions extending in a direction from the first surface side toward the second surface side of the semiconductor substrate, the conductive regions including first and second vias; a first semiconductor region surrounding a part of each of the conductive regions on the second surface side of the semiconductor substrate, a portion other than a front surface of the first semiconductor region being surrounded by the semiconductor substrate; a first electrode provided on the second surface side; second electrodes provided on the first surface side, one of the second electrodes being in contact with one of the conductive regions; and an insulating film provided between each of the conductive regions and the semiconductor substrate, and between each of the conductive regions and the first semiconductor region.


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