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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9576868 B1

PDFFull Text
Date of Patent:
Feb. 21, 2017

Filed:

Jul. 30, 2012

Semiconductor device and method for reduced bias temperature instability (bti) in silicon carbide devices

Applicants:

Joseph Darryl Michael, Delmar, NY (US);

Stephen Daley Arthur, Glenville, NY (US);

Inventors:

Joseph Darryl Michael, Delmar, NY (US);

Stephen Daley Arthur, Glenville, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:

Robert M. McCarthy

Primary Examiner:

William F Kraig

Assistant Examiner:

Edward Chin

Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/04 (2006.01); H01L 21/50 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/04 (2013.01); H01L 21/50 (2013.01); H01L 29/1608 (2013.01); H01L 29/7802 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.

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Michael, Joseph. (2017). Semiconductor device and method for reduced bias temperature instability (bti) in silicon carbide devices (U.S. Patent No. 9576868). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9576868

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