The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jun. 30, 2015
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Inventor:
Giuseppe Abbondanza, San Giovanni la Punta, IT;
Assignee:
STMICROELECTRONICS S.R.L., Agrate Brianza (MB), IT;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02532 (2013.01); H01L 21/02598 (2013.01); H01L 21/02658 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/267 (2013.01);
Abstract
An embodiment of a method for manufacturing a semiconductor wafer includes providing a monocrystalline silicon wafer, epitaxially growing a first layer of a first material on the silicon wafer, and epitaxially growing a second layer of a second material on the first layer. For example, said first material may be monocrystalline silicon carbide, and said second material may be monocrystalline silicon.