The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9576655 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 21, 2017

Filed:

Oct. 24, 2012
Applicant:

Hgst Netherlands Bv, Amsterdam, NL;

Inventors:

Evangelos S. Eleftheriou, Rueschlikon, CH;

Angeliki Pantazi, Rueschlikon, CH;

Nikolaos Papandreou, Rueschlikon, CH;

Haris Pozidis, Rueschlikon, CH;

Abu Sebastian, Rueschlikon, CH;

Assignee:

HGST NETHERLANDS B.V., Amsterdam, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0078 (2013.01);
Abstract

An apparatus for programming at least one multi-level Phase Change Memory (PCM) cell having a first terminal and a second terminal. A programmable control device controls the PCM cell to have a respective cell state by applying at least one current pulse to the PCM cell, the control device controlling the at least one current pulse by applying a respective first pulse to the first terminal and a respective second pulse applied to the second terminal of the PCM cell. The respective cell state is defined by a respective resistance level. The control device receives a reference resistance value defining a target resistance level for the cell, and further receives an actual resistance value of said PCM cell such that the applying the respective first pulse and said respective second pulse is based on said actual resistance value of the PCM cell and said received reference resistance value.


Find Patent Forward Citations

Eleftheriou, Evangelos. (2017). Apparatus and method for programming a multi-level phase change memory (pcm) cell based on an actual resistance value and a reference resistance value (U.S. Patent No. 9576655). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9576655

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