The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Dec. 22, 2014
Applicants:
Ansoo Park, Suwon-Si, KR;
In-mo Kim, Hwaseong-Si, KR;
Jung-seok Hwang, Hwaseong-Si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 5/06 (2006.01); G11C 8/14 (2006.01); G11C 13/00 (2006.01); G11C 16/08 (2006.01); G11C 11/16 (2006.01); G11C 11/22 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 5/025 (2013.01); G11C 8/14 (2013.01); G11C 11/1657 (2013.01); G11C 11/2257 (2013.01); G11C 13/0028 (2013.01); G11C 16/08 (2013.01); G11C 2213/71 (2013.01); H01L 27/11582 (2013.01);
Abstract
A nonvolatile memory device includes a first memory block connected to first word lines, a second memory block arranged in a direction perpendicular to the first memory block and is connected to second word lines, first pass transistors for enabling the first word lines, and second pass transistors for enabling the second word lines. The first and second pass transistors are arranged in a horizontal direction with respect to the first and second memory blocks.