The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2017

Filed:

Nov. 03, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Elise Laffosse, Santa Clara, CA (US);

Deniz Elizabeth Civay, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); G06F 17/50 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01);
Abstract

Methods and computer program products for decomposing and etching a circuit pattern layout are provided. The methods may include decomposing a circuit pattern layout into a first sub-pattern and second sub-pattern, where the decomposing includes: identifying, from the circuit pattern layout, a design line and a design via location associated with the design line; forming a first pattern line for the first sub-pattern corresponding to a first portion of the design line, and a second pattern line for the second sub-pattern corresponding to a second portion of the design line, with the first and second pattern lines overlapping at the design via location in an overlay of the first sub-pattern with the second sub-pattern. The first sub-pattern may be etched in a first circuit structure layer and the second sub-pattern etched in a second circuit structure layer, the etching at least partially forming a via at the design via location.


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