The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Dec. 17, 2014
Ivy D. Johnson, Lawrenceville, NJ (US);
Tilman W. Beutel, Neshanic Station, NJ (US);
Peter I. Ravikovitch, Princeton, NJ (US);
Harry W. Deckman, Clinton, NJ (US);
Jack W. Johnson, Clinton, NJ (US);
Jean W. Beeckman, Columbia, MD (US);
Natalie A. Fassbender, Nazareth, PA (US);
Nadya a Hrycenko, Clinton, NJ (US);
Randolph J. Smiley, Hellertown, PA (US);
Ivy D. Johnson, Lawrenceville, NJ (US);
Tilman W. Beutel, Neshanic Station, NJ (US);
Peter I. Ravikovitch, Princeton, NJ (US);
Harry W. Deckman, Clinton, NJ (US);
Jack W. Johnson, Clinton, NJ (US);
Jean W. Beeckman, Columbia, MD (US);
Natalie A. Fassbender, Nazareth, PA (US);
Nadya A Hrycenko, Clinton, NJ (US);
Randolph J. Smiley, Hellertown, PA (US);
EXXONMOBIL RESEARCH AND ENGINEERING COMPANY, Annandale, NJ (US);
Abstract
Methods are provided for synthesizing ZSM-58 crystals with an improved morphology and/or an improved size distribution. By controlling the conditions during synthesis of the ZSM-58 crystals, crystals of a useful size with a narrow size distribution can be generated. Steaming the H-form DDR framework type crystals at a temperature from 426±° C. to 1100±° C. for a time period from about 30 minutes to about 48 hours can attain one or more of the following properties: a CH4 diffusivity of no more than 95% of the CH4 diffusivity of the unsteamed H-form DDR framework type crystals; an N2 BET surface area from 85% to 110% of the surface area of unsteamed H-form DDR framework type crystals; and an equilibrium CO2 sorption capacity from 80% to 105% of the equilibrium CO2 sorption capacity of unsteamed H-form DDR framework type crystals.