The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jan. 21, 2016
Applicant:
Seiko Instruments Inc., Chiba-shi, Chiba, JP;
Inventors:
Naohiro Hiraoka, Chiba, JP;
Tomohiro Oka, Chiba, JP;
Assignee:
SII Semiconductor Corporation, Chiba, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 5/08 (2006.01); H03K 17/687 (2006.01); H03K 17/06 (2006.01); H03K 17/0812 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H03K 5/08 (2013.01); H03K 17/063 (2013.01); H03K 17/08122 (2013.01); H03K 17/162 (2013.01); H03K 2217/0054 (2013.01); H03K 2217/0081 (2013.01);
Abstract
To provide a switch circuit which is capable of reliably controlling transmission of a voltage from GND to VDD to an internal circuit or shut-off thereof even when a positive or negative voltage is inputted to an input terminal, and thereby reduces the risk of latch-up. A switch circuit is comprised of NMOS transistors, and the gates of the NMOS transistors are controlled by an output voltage of a boosting circuit, thereby making it possible to reliably control transmission or shut-off of a voltage from GND to VDD.