The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Mar. 27, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Chao Xu, Beijing, CN;

Chunfang Zhang, Beijing, CN;

Yan Wei, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/00 (2006.01); H03K 17/30 (2006.01); G09G 3/36 (2006.01); G11C 19/28 (2006.01);
U.S. Cl.
CPC ...
H03K 17/302 (2013.01); G09G 3/3648 (2013.01); G09G 3/3674 (2013.01); G09G 3/3677 (2013.01); G09G 2300/043 (2013.01); G09G 2310/0286 (2013.01); G09G 2320/045 (2013.01); G11C 19/28 (2013.01);
Abstract

A method for compensating a threshold voltage drift of a thin film transistor comprises: controlling a drain and a gate of the thin film transistor to have a same voltage; and keeping the voltage at the gate of the thin film transistor unchanged and controlling the voltage at the drain of the thin film transistor to be equal to a voltage at a source of the thin film transistor.


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