The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Oct. 13, 2014
Applicants:

Naoto Jikutani, Miyagi, JP;

Shunichi Sato, Miyagi, JP;

Satoru Sugawara, Miyagi, JP;

Hiroshi Motomura, Miyagi, JP;

Inventors:

Naoto Jikutani, Miyagi, JP;

Shunichi Sato, Miyagi, JP;

Satoru Sugawara, Miyagi, JP;

Hiroshi Motomura, Miyagi, JP;

Assignee:

RICOH COMPANY, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01S 5/183 (2006.01); H01S 5/187 (2006.01); B41J 2/44 (2006.01); B41J 2/47 (2006.01); H01S 5/065 (2006.01); H01S 5/32 (2006.01); H01S 5/42 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18361 (2013.01); B41J 2/442 (2013.01); B41J 2/473 (2013.01); H01L 33/10 (2013.01); H01L 33/105 (2013.01); H01S 5/187 (2013.01); H01S 5/18308 (2013.01); H01S 5/18311 (2013.01); H01S 5/0655 (2013.01); H01S 5/18347 (2013.01); H01S 5/18358 (2013.01); H01S 5/18394 (2013.01); H01S 5/3202 (2013.01); H01S 5/423 (2013.01); H01S 2301/166 (2013.01);
Abstract

A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.


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