logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570684 B1

PDFFull Text
Date of Patent:
Feb. 14, 2017

Filed:

Jul. 24, 2014

Method of doping 2-dimensional semiconductor and switching device

Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Jin-hong Park, Suwon-si, KR;

Hyung-youl Park, Suwon-si, KR;

Jae-woo Shim, Suwon-si, KR;

Jae-ho Lee, Seoul, KR;

Assignees:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Research & Business Foundation Sungkyunkwan University, Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Michelle Mandala

Assistant Examiner:

Thai T Vuong

Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 21/225 (2006.01); H01L 21/762 (2006.01); H01L 51/05 (2006.01); H01L 29/16 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 51/002 (2013.01); H01L 21/225 (2013.01); H01L 21/2253 (2013.01); H01L 21/76251 (2013.01); H01L 29/1606 (2013.01); H01L 29/24 (2013.01); H01L 51/0558 (2013.01);
Abstract

Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate.

Find Patent Forward Citations

Quick Actions:

Park, Jin-hong. (2017). Method of doping 2-dimensional semiconductor and switching device (U.S. Patent No. 9570684). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9570684

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…