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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570654 B1

PDFFull Text
Date of Patent:
Feb. 14, 2017

Filed:

Jun. 17, 2015

Nitride light emitting diode and fabrication method thereof

Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Wen-Yu Lin, Xiamen, CN;

Meng-Hsin Yeh, Xiamen, CN;

Zhibai Zhong, Xiamen, CN;

Assignee:

XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;

Attorneys:

Syncoda LLC

Feng Ma

Junjie Feng

Primary Examiner:

Su C Kim

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01); H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01); H01L 21/02 (2006.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 21/02658 (2013.01); H01L 25/0753 (2013.01); H01L 27/15 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/007 (2013.01); H01L 33/20 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.

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