The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Jan. 29, 2015
Atomic-energy Council-institute of Nuclear Energy Research, Taoyuan County, TW;
Yu-Han Su, Taoyuan County, TW;
Wei-Yang Ma, Taoyuan County, TW;
Tsun-Neng Yang, Taoyuan County, TW;
Cheng-Dar Lee, Taoyuan County, TW;
Atomic Energy Council—Institute of Nuclear Energy Research, Taoyuan County, TW;
Abstract
The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method according to the prior art, the semiconductor substrate below the ARC is damaged by direct destructive burning. According to the present invention, an additional protection layer is inserted between the ARC and the semiconductor substrate. Then a laser is used for heating and liquefying the protection layer below the ARC, and thus separating the ARC from the liquefied protection layer underneath and forming pattered openings. Afterwards, by a plating process, nickel and copper can plated.