The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Mar. 14, 2016
Applicant:

Samsung Display Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Yungbin Chung, Seoul, KR;

Seungkyeng Cho, Hwaseong-si, KR;

Chulhyun Baek, Asan-si, KR;

Injun Choi, Asan-si, KR;

Bogeon Jeon, Gimcheon-si, KR;

Eunjeong Cho, Busan, KR;

Sunghoon Yang, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); G02F 1/1341 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); G02F 1/1341 (2013.01); G02F 1/1368 (2013.01); G02F 1/134309 (2013.01); H01L 21/0217 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 27/1248 (2013.01); H01L 27/1262 (2013.01); H01L 27/322 (2013.01); H01L 27/3262 (2013.01); H01L 29/66765 (2013.01); H01L 29/78669 (2013.01);
Abstract

A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a first passivation layer including a silicon nitride-based material and on the semiconductor layer, the source electrode, and the drain electrode; a second passivation layer including a silicon nitride-based material and on the first passivation layer; and a third passivation layer including a silicon nitride-based material and on the second passivation layer, where a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer.


Find Patent Forward Citations

Loading…