The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Apr. 06, 2015
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7396 (2013.01); H01L 29/0619 (2013.01); H01L 29/0634 (2013.01); H01L 29/0653 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/66348 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7802 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01);
Abstract
A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a lateral direction parallel to a first surface of the semiconductor portion, and a compensation structure covering at least sidewalls of the mesa regions. The compensation structure includes at least two first compensation layers of a first conductivity type, at least two second compensation layers of a complementary second conductivity type, and at least one interdiffusion layer between one of the first and one of the second compensation layers.