The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Sep. 11, 2015
Nxp B.v., Eindhoven, NL;
Tony Vanhoucke, Leuven, BE;
Viet Thanh Dinh, Leuven, BE;
Petrus Hubertus Cornelis Magnee, Nijmegen, NL;
Ponky Ivo, Leuven, NL;
Dirk Klaassen, Eindhoven, NL;
Mahmoud Shehab Mohammad Al-Sa'di, Nijmegen, NL;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor device comprising a bipolar transistor and a method of making the same. A power amplifier including a bipolar transistor. The bipolar transistor includes a collector including a laterally extending drift region. The also includes a base located above the collector. The bipolar transistor further includes an emitter located above the base. The bipolar transistor also includes a doped region having a conductivity type that is different to that of the collector. The doped region extends laterally beneath the collector to form a junction at a region of contact between the doped region and the collector. The doped region has a non-uniform lateral doping profile. A doping level of the doped region is highest in a part of the doped region closest to a collector-base junction of the bipolar transistor.