The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Apr. 14, 2014
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Takeyoshi Masuda, Osaka, JP;

Shunsuke Yamada, Osaka, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 21/04 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 21/045 (2013.01); H01L 21/049 (2013.01); H01L 29/0649 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/872 (2013.01);
Abstract

A semiconductor substrate has an element portion and a termination portion located on an outer side of the element portion. A first electrode layer is provided on a first surface of the semiconductor substrate. A second electrode layer is provided on a second surface of the semiconductor substrate in an upper portion of the element portion. An interlayer insulation film is provided on the second surface of the semiconductor substrate. The interlayer insulation film has: an element insulation portion that provides insulation between a part of the element portion of the semiconductor substrate and the second electrode layer; and a termination insulation portion covering a termination portion of the semiconductor substrate. The termination insulation portion includes a high dielectric constant film that is higher in dielectric constant than the element insulation portion.


Find Patent Forward Citations

Loading…